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MITSUBISHI SEMICONDUCTOR
MGF0909A
L & S BAND GaAs FET [ non - matched ]
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
OUTLINE DRAWING
Unit : millimeters
FEATURES
* High output power P1dB=38.0dBm(TYP.) @f=2.3GHz * High power gain GLp=11.0dB(TYP.) add=45%(TYP.) * Hermetic Package @f=2.3GHz @f=2.3GHz,P1dB * High power added efficiency
A
O2.2
0.6*}0.2 B
A
APPLICATION
* For L/S Band power amplifiers
QUALITY
* GG * Vds=10V * Ids=1.3A * Rg=100
1.650.1
RECOMMENDED BIAS CONDITIONS
5.0
9.0*}0.2
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
(Ta=25C)
14.0
0.65
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 5 -15 31.5 27.3 175 -65 to +175
Unit
V V A mA mA W C C
GF-7
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
Electrical characteristics
Symbol
IDSS VGS(off) gm P1dB add GLP Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power 1dB Compression P Power added Efficiency Linear Power Gain Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz -2.0 37.0 10.0 -
Limits
Typ. -1.5 38.0 45 11.0 Max. 5.0 -5.0 9
Unit
A V S dBm % dB C/W
*1 *1:Po=P1dB *2
*2:Pi=22dBm Vf Method
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
2MIN 4.4+0/-0.3 2MIN
@
1.9*}0.4
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=0deg TC=50deg 45 TC=25deg TC=75deg 90
40
80
35 Po Pout(dBm) 30
70
60
PAE 20 40
GLP(dB)
15 GP 10
30
20
5
10
0 0 10 20 Pin (dBm) 30 40
0
Mitsubishi Electric
PAE (%)
June/2004
25
50
MITSUBISHI SEMICONDUCTOR
MGF0909A
L & S BAND GaAs FET [ non - matched ]
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Mitsubishi Electric
June/2004

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